Sunday, November 4, 2012
Topics Covered
Substrate materials: Crystal growth and wafer preparation, epitaxial growth technique, molecular beam epitaxy, chemical vapor phase epitaxy and chemical vapor deposition (CVD). Doping techniques: Diffusion and ion implantation. Growth and deposition of dielectric layers: Thermal oxidation, CVD, plasma CVD, sputtering and silicon-nitride growth. Etching: Wet chemical etching, silicon and GaAs etching, anisotropic etching, selective etching, dry physical etching, ion beam etching, sputtering etching and reactive ion etching. Cleaning: Surface cleaning, organic cleaning and RCA cleaning. Lithography: Photo-reactive materials, pattern generation, pattern transfer and metalization. Discrete device fabrication: Diode, transistor, resistor and capacitor. Integrated circuit fabrication: Isolation - pn junction isolation, mesa isolation and oxide isolation. BJT based microcircuits, p-channel and n-channel MOSFETs, complimentary MOSFETs and silicon on insulator devices. Testing, bonding and packaging.
Topics Covered
VLSI MOS system design: Layout extraction and verification, full and semi-full custom design styles and logical and physical positioning. Design entry tools: Schematic capture and HDL. Logic and switch level simulation. Static timing. Concepts and tools of analysis, solution techniques for floor planning, placement, global routing and detailed routing. Application specific integrated circuit design including FPGA.
Topics Covered
VLSI technology: Terminologies and trends, MOS transistor characteristics and equations, NMOS and CMOS inverters, DC and transient characteristics, Pass transistors and pass gates, CMOS layout and design rules, Complex CMOS gates, Resistance and capacitance, Estimation and modeling, Signal propagation, delay, noise margin and power consumption, Interconnect BiCMOS circuits. CMOS building blocks, Adders, Counters, Multipliers and barrel shifters. Data paths, Memory structures, PLAs and FPGAs. VLSI testing, Objectives and strategies. VLSI technology: Top down design approach, technology trends and design styles. Review of MOS transistor theory: Threshold voltage, body effect, I-V equations and characteristics, latch-up problems, NMOS inverter, CMOS inverter, pass-transistor and transmission gates. CMOS circuit characteristics and performance estimation: Resistance, capacitance, rise and fall times, delay, gate transistor sizing and power consumption. CMOS circuit and logic design: Layout design rules and physical design of simple logic gates. CMOS subsystem design: Adders, multiplier and memory system, arithmetic logic unit. Programmable logic arrays. I/O systems. VLSI testing.
Topics Covered
Introduction to VHDL. Basic VHDL constructs. Design of combinational logic (adders, multipliers, comparators, multiplexers/ demultiplexers, ALUs etc.) and sequential logic (flip-flops, registers, shift registers, random number generators, counters, FSMs etc.) with behavioral VHDL descriptions. Use of an industrial EDA tool for functional and post-route simulations, logic synthesis and automatic place and route. Writing testbenches. Design of FSMs. Converting algorithms to hardware using ASM charts and top-down design methodologies with CPLDs and FPGAs as target technologies. Emphasis on FSM design techniques. Controller-datapath partitioning. Algorithms that describe datapath elements. Microcontrollers. Design of simple and RISC processors. Pipelining.
Topics Covered
Diode logic gates, transistor switches, transistor-transistor gates, MOS gates, Logic Families: TTL, ECL, IIL and CMOS logic with operation details. Propagation delay, Product and noise immunity, Open collector and high impedance gates. Electronic circuit for flip-flops, counters and registers, memory systems. PLAs, A/D and D/A converters with applications. S/H circuits. LED, LCD and optically coupled oscillators. Non-linear applications of OP-AMPs. Analog switches. Linear wave shaping; diode wave shaping techniques; clipping and clamping circuits, comparator circuits, switching circuits. Pulse transformers pulse transmission. Pulse generation. Monostable, bistable and astable multivibrators; Schmitt trigger; blocking oscillators and time base circuit. Timing circuit, simple voltage sweeps, linear current sweeps. Introduction to number systems and codes. Analysis and synthesis of digital logic circuits: Basic logic functions, Boolean algebra, combinational logic design, minimization of combinational logic. Implementation of basic static logic gates in CMOS and BiCMOS: DC characteristics, noise margin and power dissipation. Power optimization of basic gates and combinational logic circuits. Modular combinational circuit design: pass transistor, pass gates, multiplexer, demultiplexer and their implementation in CMOS, decoder, encoder, comparators, binary arithmetic elements and ALU design. Programmable logic devices: logic arrays, field programmable logic arrays and programmable read only memory. Sequential circuits: different types of latches, flip-flops and their design using ASM approach, timing analysis and power optimization of sequential circuits. Modular sequential logic circuit design: shift registers, counters and their applications.
Topics Covered
Number systems and codes, Digital logic: Boolean algebra, De-Morgan's law, Logic gates and their
truth tables, canonical forms, combinational logic circuits, minimization techniques, Arithmetic and
data handling logic circuit, decoders and encoders. Multiplexers and Demultiplexers. Combinational
Circuit design, Flip-flops, race around problems, Counters: Asynchronous and Synchronous
counters and their applications. Synchronous and asynchronous logic design: state diagram, Mealy
and Moore machine. State minimization and assignments. Pulse mode logic. Fundamental mode
logic design.
truth tables, canonical forms, combinational logic circuits, minimization techniques, Arithmetic and
data handling logic circuit, decoders and encoders. Multiplexers and Demultiplexers. Combinational
Circuit design, Flip-flops, race around problems, Counters: Asynchronous and Synchronous
counters and their applications. Synchronous and asynchronous logic design: state diagram, Mealy
and Moore machine. State minimization and assignments. Pulse mode logic. Fundamental mode
logic design.
Topics Covered
Residual impurities in silicon wafers, zone refining. Crystal imperfections: structural, optical and electronic properties . Implantation related defects, recovery of crystal structure, solid phase epitaxial regrowth (SPE). Semiconductor alloys: Structural and electronic properties: growth techniques- molecular beam epitaxy (MBE). Chemical vapour deposition (CVD): pseudomorphic and metastable structures, tetragonal distortion. Strain relaxation. Structural and optical properties of double sided heterostructures, quantum wells and superlattices; types of band alignment. Solid state heterostructural LED and LASER . optoelectronic Functionality in silicon chip . Structural and electrical study of heterojunction bipolar transistor (HBT), heterojunction avalanche photodiode, and silicon-germanium MOSFET .
Topics Covered
Crystal Structure: lattice types, basis, defects, reciprocal lattice, Miller indices. Free Electron Theory: Drude model and Sommerfield theory. Band Theory: Blochis theorem and crystal momentum, the nearly free electron model, band structures of Si and lll-V semiconductors. Carrier Transport: Boltzmann transpord theory, relaxation time approximation, high field transport and hot-carrier effects, Hall effect.
Topics Covered
Electric Properties: Polarization, electrical conductivity and dielectric losses. Pyroelectric phenomena . piezoelectric effect and electrostriction. Domain structure and peculiarities electric properties of ferroelectrics and anti-ferroelectrics. Structure and properties of some ferroelectrics and anti-ferroelectrics. Phase transition in ferroelectrics, fundamentals of spontaneous polarization theory. Magnetic Properties: Disordered magnetics, ordered magnetics. Domain structure of ferromagnetic crystals and magnetization processes. Anisotropy of ferroelectric crystals. Structure of some magnetically ordered crystals and reorientation transition. Piezomagnetic and magnetoelectric effect.
Topics Covered
Overview of semiconductor technology. Structural characterization: X-ray diffraction (XRD), low energy electron diffraction (LEED), reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), scanning tunneling microscopy (STM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Rutherford backscattering spectroscopy (RBS), energy dispersive x-ray analysis (EDX), Auger electron spectroscopy (AES), electron energy loss spectroscopy (EELS), secondary ion mass spectroscopy (SIMS), X-ray photoelectron spectroscopy (XPS), elastic recoil detection (ERD). Electrical characterization: resistivity measurements, Hall measurement, current-voltage (I-V), capacitance-voltage (C-V), deep level transient spectroscopy (DLTS), lifetime measurements. Optical characterization: optical transmittance and reflectance spectroscopy, ellipsometry, photoluminescence (PL), Raman spectroscopy, Fourier transform infrared spectroscopy.
Topics Covered
Introduction to GaAs device technology. GaAs metal-semiconductor field effect transistor (GaAs MESFET): introduction, structure, equivalent circuits, current saturation, effect of source and drain resistances, gate resistance and application of GaAs MESFET. High electron mobility transistor (HEMT):practical HEMT structure, energy band line-up, equivalent circuit, HEMT noise, pseudomorphic HEMT and applications. Opto-electronic integration of compound semiconductor devices: heterojunction phototransistor (HPT) and light amplifying optical switch (LAOS). Low-temperature compound semiconductor electronics. Design consideration of MMICs and power MMICs using compound semiconductor devices.
Topics Covered
The two terminal MOS Structure: flat-band voltage, inversion, properties of the regions of inversion and small signal capacitance. The four terminal MOS structure: charge-sheet model, strong inversion, moderate inversion and weak inversion. Threshold voltage-effects of ion implantation, short channel and narrow width. The MOS transistor in dynamic operation, small signal model for low medium and high frequencies, Charge Coupled devices (CCD).
Topics Covered
Compound semiconductor: Zinc-blend crystal structures, growth techniques, alloys, band gap, density of carriers in intrinsic and doped compound semiconductors. Hetero-Junctions: Band alignment, band offset, Andersons rule, single and double sided hetero-junctions, quantum wells and quantization effects, lattice mismatch and strain and common hetero-structure material systems. Hetero-Junction diode: Band banding, carrier transport and I-V characteristics. Hetero-junction field effect transistor: Structure and principle, band structure, carrier transport and I-V characteristics. Hetero-structure bipolar transistor (HBT): Structure and operating principle, quasi-static analysis, extended Gummel-Poon model, Ebers-Moll model, secondary effects and band diagram of a graded alloy base HBT.
Topics Covered
Lattice vibration: Simple harmonic model, dispersion relation, acoustic and optical phonons. Band structure: Isotropic and anisotropic crystals, band diagrams and effective masses of different semiconductors and alloys. Scattering theory: Review of classical theory, Fermi-Golden rule, scattering rates of different processes, scattering mechanisms in different semiconductors, mobility. Different carrier transport models: Drift-diffusion theory, ambipolar transport, hydrodynamic model, Boltzman transport equations, quantum mechanical model, simple applications.
Topics Covered
Semiconductors in equilibrium: Energy bands, intrinsic and extrinsic semiconductors, Fermi levels, electron and hole concentrations, temperature dependence of carrier concentrations and invariance of Fermi level. Carrier transport processes and excess carriers: Drift and diffusion, generation and recombination of excess carriers, built-in-field, Einstein relations, continuity and diffusion equations for holes and electrons and quasi-Fermi level. PN junction: Basic structure, equilibrium conditions, contact potential, equilibrium Fermi level, space charge, non-equilibrium condition, forward and reverse bias, carrier injection, minority and majority carrier currents, transient and AC conditions, time variation of stored charge, reverse recovery transient and capacitance. Bipolar Junction Transistor: Basic principle of pnp and npn transistors, emitter efficiency, base transport factor and current gain, diffusion equation in the base, terminal currents, coupled-diode model and charge control analysis, Ebers-Moll equations and circuit synthesis. Metal-semiconductor junction: Energy band diagram of metal semiconductor junctions, rectifying and ohmic contacts. MOS structure: MOS capacitor, energy band diagrams and flat band voltage, threshold voltage and control of threshold voltage, static C-V characteristics, qualitative theory of MOSFET operation, body effect and current-voltage relationship of a MOSFET. Junction Field-Effect-Transistor: Introduction, qualitative theory of operation, pinch-off voltage and current-voltage relationship.
Topics Covered
Crystal structures: Types of crystals, lattice and basis, Bravias lattice and Miller indices. Introduction to Quantum Mechanics: Wave nature of electrons, Schrodinger's equation, one dimensional quantum problems, infinite quantum well, potential step and potential barrier. Heisenburg's uncertainty principle, quantum box. Classical theory of electrical and thermal conduction: scattering, mobility and resistivity, temperature dependence of resistivity of metals and Matheson’s rule, Hall effect, thermal conductivity. Band theory of solids: band theory from molecular orbital, Bloch theorem, Kronig-Penny model, electron effective mass, density of states. Carrier statistics: Maxwell Boltzman and Fermi Dirac distribution, Fermi energy. Modern theory of metals: Determination of Fermi energy and average energy of metals based on energy band model and Fermi-Dirac distribution functions, classical and quantum mechanical specific heat of electrons in a metal. Dielectric properties of materials: Polarization and dielectric constant, electronic, ionic and orientational polarization, Clausius-Mosotti equation, frequency dependence dielectric constants, dielectric loss and piezoelectricity. Magnetic properties of materials: Magnetic moment, magnetization and relative permittivity, different types of magnetic materials, origin of ferromagnetism and magnetic domains. Introduction to Superconductivity: Zero resistance and Meissener effect Type 1 and Type 2 superconductor and critical current density. Crystal structures: Types of crystals, lattice and basis, Bravais lattice and Miller indices. Classical theory of electrical and thermal conduction: Scattering, mobility and resistivity, temperature dependence of metal resistivity, Mathiessens rule, Hall effect and thermal conductivity. Introduction to quantum mechanics: Wave nature of electrons, Schrodingers equation, one-dimensional quantum problems- infinite quantum well, potential step and potential barrier; Heisenbergss uncertainty principle and quantum box. Band theory of solids: Band theory from molecular orbital, Bloch theorem, Kronig-Penny model, effective mass, density-of-states. Carrier statistics: Maxwell-Boltzmann and Fermi-Dirac distributions, Fermi energy. Modern theory of metals: Determination of Fermi energy and average energy of electrons, classical and quantum mechanical calculation of specific heat. Dielectric properties of materials: Dielectric constant, polarization- electronic, ionic and orientational; internal field, Clausius-Mosotti equation, spontaneous polarization, frequency dependence of dielectric constant, dielectric loss and piezoelectricity. Magnetic properties of materials: Magnetic moment, magnetization and relative permitivity, different types of magnetic materials, origin of ferromagnetism and magnetic domains. Introduction to superconductivity: Zero resistance and Meissner effect, Type I and Type II superconductors and critical current density.
Topics Covered
Review of FET amplifiers: Passive and active loads and frequency limitation. Current mirror: Basic, cascode and active current mirror. Differential Amplifier: Introduction, large and small signal analysis, common mode analysis and differential amplifier with active load. Noise: Introduction to noise, types, representation in circuits, noise in single stage and differential amplifiers and bandwidth. Band-gap references: Supply voltage independent biasing, temperature independent biasing, proportional to absolute temperature current generation and constant transconductance biasing. Switch capacitor circuits: Sampling switches, switched capacitor circuits including unity gain buffer, amplifier and integrator. Phase Locked Loop (PLL): Introduction, basic PLL and charge pumped PLL.
Topics Covered
Feedback amplifiers: classification, feedback concept, effect of feedback on transfer gain, amplifier characteristics, types of feedback, negative feedback amplifiers and their applications. Sinusoidal oscillators: conditions of self-oscillation; phase shift resonant circuit; Colpitts and Hartley oscillator, Wein bridge and crystal oscillators. Operational amplifiers (OP-AMP): Introduction to OP-AMPs, Inverting and Non-inverting amplifier, phase inverter, scale changer, integrating and differentiating circuits, adder or summing amplifier, voltage to current and current to voltage converter, voltage follower, analog electronic computation, differential, instrumentation and bridge amplifiers. AC performance of OP-AMPs: Bandwidth, slew rate, noise and frequency compensation, active filters. Un-tuned power amplifiers: Class A, Class B, Push-pull and Darlington pair amplifiers. Tuned voltage (R.F. and I.F.) and power (Class B, Class C) amplifiers. Modulation: Amplitude Modulation (AM) and Demodulation, Frequency Modulation (FM) and demodulation.
Topics Covered
Operation and small signal models of diodes. Circuit application of diodes. BJT and FET biasing and thermal stabilization ; BJT and FET at low frequencies: Hybrid pi-model for small signals. H parameters. Analysis of transistor amplifier using h-parameters, high input resistance transistor circuits; BJT and FET at high frequencies: Hybrid pi-model,. CE short circuit current gain, current gain with resistive load, single stage CE transistor amplifier response, low and high frequency response of R-C coupled amplifier, effect of harmonics on amplifiers. Regulated power supply: series voltage regulator and emitter follower regulator.
Friday, November 2, 2012
Topics Covered
Frequency response of amplifiers: Poles, zeros and Bode plots, amplifier transfer function, techniques of determining 3 dB frequencies of amplifier circuits, frequency response of single-stage and cascade amplifiers, frequency response of differential amplifiers. Operational amplifiers (Op-Amp): Properties of ideal Op-Amps, non-inverting and inverting amplifiers, inverting integrators, differentiator, weighted summer and other applications of Op-Amp circuits, effects of finite open loop gain and bandwidth on circuit performance, logic signal operation of Op-Amp, DC imperfections. General purpose Op-Amp: DC analysis, small-signal analysis of different stages, gain and frequency response of 741 Op-Amp. Negative feedback: properties, basic topologies, feedback amplifiers with different topologies, stability, frequency compensation. Active filters: Different types of filters and specifications, transfer functions, realization of first and second order low, high and bandpass filters using Op-Amps. Signal generators: Basic principle of sinusoidal oscillation, Op-Amp RC oscillators, LC and crystal oscillators. Power Amplifiers: Classification of output stages, class A, B and AB output stages.
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