Friday, November 2, 2012

Topics Covered

P-N junction as a circuit element: Intrinsic and extrinsic semiconductors, operational principle of p-n junction diode, contact potential, current-voltage characteristics of a diode, simplified DC and AC diode models, dynamic resistance and capacitance. Diode circuits: Half wave and full wave rectifiers, rectifiers with filter capacitor, characteristics of a Zener diode, Zener shunt regulator, clamping and clipping circuits. Bipolar Junction Transistor (BJT) as a circuit element: current components, BJT characteristics and regions of operation, BJT as an amplifier, biasing the BJT for discrete circuits, small signal equivalent circuit models, BJT as a switch. Single stage mid-band frequency BJT amplifier circuits: Voltage and current gain, input and output impedance of a common base, common emitter and common collector amplifier circuits. Metal Oxide
Semiconductor Field Effect Transistor (MOSFET) as circuit element: structure and physical operation of  an enhancement MOSFET, threshold voltage, Body effect, current-voltage characteristics of an enhancement MOSFET, biasing discrete and integrated MOS amplifier circuits, single-stage MOS amplifiers, MOSFET as a switch, CMOS inverter. Junction Field-Effect-Transistor (JFET): Structure and physical operation of JFET, transistor characteristics, pinch-off voltage. Differential and multistage amplifiers: Description of differential amplifiers, small-signal operation, differential and common mode gains, RC coupled mid-band frequency amplifier.

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