Sunday, November 4, 2012

Topics Covered

Substrate materials: Crystal growth and wafer preparation, epitaxial growth technique, molecular beam epitaxy, chemical vapor phase epitaxy and chemical vapor deposition (CVD). Doping techniques: Diffusion and ion implantation. Growth and deposition of dielectric layers: Thermal oxidation, CVD, plasma CVD, sputtering and silicon-nitride growth. Etching: Wet chemical etching, silicon and GaAs etching, anisotropic etching, selective etching, dry physical etching, ion beam etching, sputtering etching and reactive ion etching. Cleaning: Surface cleaning, organic cleaning and RCA cleaning. Lithography: Photo-reactive materials, pattern generation, pattern transfer and metalization. Discrete device fabrication: Diode, transistor, resistor and capacitor. Integrated circuit fabrication: Isolation  -  pn junction isolation, mesa isolation and oxide isolation. BJT based microcircuits, p-channel and n-channel MOSFETs, complimentary MOSFETs and silicon on insulator devices. Testing, bonding and packaging.

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