Topics Covered

The two terminal MOS Structure: flat-band voltage, inversion, properties of the regions of inversion and small signal capacitance. The four terminal MOS structure: charge-sheet model, strong inversion, moderate inversion and weak inversion. Threshold voltage-effects of ion implantation, short channel and narrow width. The MOS transistor in dynamic operation, small signal model for low medium and high frequencies, Charge Coupled devices (CCD).