Sunday, November 4, 2012

Topics Covered

Introduction to GaAs device technology. GaAs metal-semiconductor field effect transistor (GaAs MESFET): introduction, structure, equivalent circuits, current saturation, effect of source and drain resistances, gate resistance and application of GaAs MESFET. High electron mobility transistor (HEMT):practical HEMT structure, energy band line-up, equivalent circuit, HEMT noise, pseudomorphic HEMT and applications. Opto-electronic integration of compound semiconductor devices: heterojunction phototransistor (HPT) and light amplifying optical switch (LAOS). Low-temperature compound semiconductor electronics. Design consideration of MMICs and power MMICs using compound semiconductor devices.

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